| 摘要 |
A method for manufacturing a semiconductor device having a recess gate is provided to secure a threshold voltage and a refresh characteristic by employing the recess gate for preventing the damage of an active region adjacent to an isolation region. A active region having a major axis and a short axis is defined on a semiconductor substrate(31). The semiconductor substrate is prepared. A recess forming region on the semiconductor substrate is opened and then a recess mask(34) is formed to cover both ends of the major axis of the active region. The recess mask is used as an etch mask to etch the semiconductor substrate, thereby forming a recess. Before the recess mask is formed, a polysilicon hard mask(33) is formed. The recess mask is formed with a photoresist layer. The photoresist layer is formed in the form of a line type.
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