发明名称 |
Chemical vapor deposition apparatus |
摘要 |
A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a chamber sidewall. A passageway in the chamber sidewall extends from the transfer chamber to the deposition chamber. Semiconductor substrates pass into and out of the deposition chamber through the passageway for deposition processing. A mechanical gate is included within at least one of the deposition chamber and the sidewall passageway, and is configured to open and close at least a portion of the passageway to the chamber. A chamber liner apparatus of a chemical vapor deposition apparatus forms a deposition subchamber within the chamber. At least a portion of the chamber liner apparatus is selectively movable to fully expose and to fully cover the passageway to the chamber.
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申请公布号 |
US7270715(B2) |
申请公布日期 |
2007.09.18 |
申请号 |
US20030695726 |
申请日期 |
2003.10.28 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DANDO ROSS S.;CARPENTER CRAIG M.;CAMPBELL PHILIP H.;MARDIAN ALLEN P. |
分类号 |
C23C16/00;C23C16/44;C23C16/455;C23C16/54;C23F1/00;H01L21/306 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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