发明名称 |
Group III-V nitride-based semiconductor substrate and method of making same |
摘要 |
A group III-V nitride-based semiconductor substrate having a group III-V nitride-based semiconductor thick film with a same composition in the entire film. The thick film has a first region with a predetermined impurity concentration and a second region with an impurity concentration lower than the first region.
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申请公布号 |
US7271404(B2) |
申请公布日期 |
2007.09.18 |
申请号 |
US20050312634 |
申请日期 |
2005.12.21 |
申请人 |
HITACHI CABLE, LTD. |
发明人 |
OSHIMA YUICHI;SHIBATA MASATOMO |
分类号 |
H01L29/06;H01L33/32 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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