| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent a gate oxide layer from being degraded when performing a high density plasma process by forming a seed layer containing a high amount of silicon on a conductive pattern to perform a role as a barrier. A conductive film pattern is formed on a semiconductor substrate(200). A seed layer(224) is formed on the conductive film pattern, of which amount of silicon is highly contained. An interlayer dielectric is formed to fill the conductive film pattern on the seed layer.
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