| 摘要 |
A ferroelectric material includes a compound of formula (I): <?in-line-formulae description="In-line Formulae" end="lead"?>(Pb<SUB>1-x-z</SUB>Ba<SUB>z</SUB>A<SUB>x</SUB>)(B<SUB>y</SUB>Zr<SUB>1-y</SUB>)O<SUB>3</SUB>, (I)<?in-line-formulae description="In-line Formulae" end="tail"?> wherein 0<=x<=0.1, 0<=y<=0.020, 0.15<=z<=0.35, with the proviso that y<>0 when x=0, and that x<>0, when y=0; and wherein A is a first element having a valence number greater than that of Pb, and B is a second element having a valence number greater than that of Zr. A ferroelectric memory device made from the ferroelectric material is also disclosed.
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