| 摘要 |
This disclosure concerns a semiconductor memory device comprising a semiconductor substrate; a first dielectric film provided on the semiconductor substrate; two Fins provided on the first dielectric film and made of a semiconductor material; a second dielectric film provided on facing inner side surfaces among side surfaces of the two Fins; a third dielectric film provided on outer side surfaces among side surfaces of the two Fins; a gate electrode provided via the second dielectric film between the inner side surfaces of the two Fins; and a plate electrode provided via the third dielectric film on the outer side surfaces of the two Fins, wherein the two Fins, the gate electrode, and the plate electrode are included in one memory cell.
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