发明名称 |
Method for depositing nitride film using chemical vapor deposition apparatus of single chamber type |
摘要 |
The present invention relates to a method for depositing a nitride film using a chemical vapor deposition apparatus of single chamber type, and more particularly to a method for depositing a nitride film that is capable of depositing the nitride film in which an area of the nitride film at the top of an interlayer isolation film has a larger thickness compared to each area thereof at the sides and the bottom of the interlayer isolation film and/or a contact hole by regulating a mixture ratio of an ammonia gas and a silane gas, both of which being process gases, using a chemical vapor deposition apparatus of single chamber type.
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申请公布号 |
US7326438(B2) |
申请公布日期 |
2008.02.05 |
申请号 |
US20050529535 |
申请日期 |
2005.03.29 |
申请人 |
EUGENE TECHNOLOGY CO., LTD. |
发明人 |
UM PYUNG-YONG |
分类号 |
C23C16/34;H01L21/205;H01L21/314;H01L21/318;H01L21/768;H01L21/8242 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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