Charge-trapping-memory device i.e. Nitride ROM, programming and deletion method, involves executing programming cycle as reference point that is shifted based on wear-level determination, and executing testing process based on threshold

摘要

The method involves implementing a programming/deletion cycle of a charge trapping memory device as a reference point based on a preset threshold of the charge trapping memory device. A wear-level of the deletion process is determined. The reference point is shifted according to the determination result. Multiple programming-/deletion cycles are implemented based on the shifted threshold. Reading and testing processes are also implemented based of the shifted threshold. An independent claim is also included for a charge-trapping-memory device comprising an oxide layer.