| 摘要 |
In one implementation, field oxide is grown within bulk semiconductive material in a first circuitry area and not over immediately adjacent bulk semiconductive material in a second circuitry area. The field oxide is etched from the first circuitry area. After the etching, a circuit component is formed in the first circuitry area and a circuit component is formed in the second circuitry area. Dielectric material is formed over the first and second circuitry areas. The dielectric material comprises a conductive contact extending outwardly from the circuit component in the first circuitry area. The dielectric material has a first outermost surface. A portion of the dielectric material and a portion of the conductive contact are removed to form a second outermost surface of the dielectric material which has greater degree of planarity than did the first outermost surface. Other aspects are contemplated. |
