| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a near-field exposing method with which the pattern of a fine opening formed on an exposure mask can be accurately and efficiently exposed, with proximity EB lithography, to 1:1 with respect to an object to be exposed. <P>SOLUTION: The present invention relates to a near-field exposing method for exposing an object to be exposed using near-field light generated in the opening of an exposure mask comprising a light shielding film having the opening, including the steps of: when an opening width of the opening of the exposure mask is defined as s(nm), a working pitch of the object to be exposed is defined as p(nm) and coefficients are defined as (a) and (b), determining the opening width so as to satisfy an equation (1), inequality (2), and inequality (3); preparing the exposure mask including the opening with the opening width; and exposing the object to be exposed by irradiating the exposure mask with exposure light. <P>COPYRIGHT: (C)2008,JPO&INPIT |
