发明名称 EUV LIGHT SOURCE, EUV EXPOSURE DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a means of efficiently cooling an electrode in a rotary electrode type DPP light source. <P>SOLUTION: An EUV light source has an electrode portion, an electrode drive portion, and an electrode cooling portion. The electrode portion makes a target material into plasma by a discharge between a pair of electrodes to emit EUV light from the generated plasma. The electrode drive portion rotates the electrode portion. The electrode cooling portion cools the electrode portion in a non-contact state. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008311465(A) 申请公布日期 2008.12.25
申请号 JP20070158406 申请日期 2007.06.15
申请人 NIKON CORP 发明人 MURAKAMI KATSUHIKO
分类号 H01L21/027;G03F7/20;H05G2/00 主分类号 H01L21/027
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