发明名称 CHARGED PARTICLE BEAM EXPOSURE METHOD AND CHARGED PARTICLE BEAM EXPOSURE SYSTEM
摘要 <P>PROBLEM TO BE SOLVED: To provide a charged particle beam exposure method and a charged particle beam exposure system which remedy the irregularity of pattern line widths (CD) caused by fogging in an exposure area. <P>SOLUTION: According to the charged particle beam exposure method, charged particle beams are emitted on a sample substrate to expose a desired pattern to the beams. An area affected by fogging caused by exposure to charged particle beams is determined in advance (step 1). An exposure area of the pattern on the sample substrate is divided into subareas smaller than the area affected by fogging, and the amount of fogging irradiation on the sample substrate resulting from fogging in each small area is calculated (step 4 and 5). In beam exposure to the pattern extending from the outermost periphery of the sample substrate into the area affected by fogging, the amount of irradiation of charged particle beams is corrected for each small area in corresponding to the calculated amount of fogging irradiation (step 9). <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008311311(A) 申请公布日期 2008.12.25
申请号 JP20070155610 申请日期 2007.06.12
申请人 TOSHIBA CORP 发明人 KOSHIBA TAKESHI;INENAMI RYOICHI;OTA TAKUMI;MIZUNO HISAYUKI
分类号 H01L21/027;G03F7/20;H01J37/305 主分类号 H01L21/027
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