发明名称 Device packages having a III-nitride based power semiconductor device
摘要 A semiconductor device package includes a die pad, a substrate disposed on the die pad, and a III-nitride based semiconductor device disposed on the substrate. The device package may also include a second semiconductor device disposed on the die pad or the substrate, which device may be electrically connected to the III-nitride based device to form a circuit.
申请公布号 US7547964(B2) 申请公布日期 2009.06.16
申请号 US20060410457 申请日期 2006.04.24
申请人 INTERNATIONAL RECTIFIER CORPORATION 发明人 PAVIER MARK;CONNAH NORMAN GLYN
分类号 H01L23/52 主分类号 H01L23/52
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