Advanced process control model incorporating a target offset term

摘要

An advanced process control (APC) architecture comprising a process model that incorporates a target offset term is provided. The APC architecture may be applied to a so-called develop inspect critical dimension (DICD) model using the target offset term to correct at least one exposure parameter on the occurrence of an abrupt event. A corresponding event may, for example, concern a modified reflectivity of processed substrates, for example due to a rework of substrates covered by amorphous carbon material.