发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE |
摘要 |
A wafer is placed on a lower electrode disposed in a reaction chamber; process gas is introduced into the reaction chamber; a magnetic field is applied at a position spaced from a surface of the wafer to be processed; plasma is generated by applying a high-frequency voltage between the lower electrode and an upper electrode disposed to face the lower electrode; the magnetic field is removed after the plasma is stabilized; and the wafer is plasma-processed.
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申请公布号 |
US2009156002(A1) |
申请公布日期 |
2009.06.18 |
申请号 |
US20080331199 |
申请日期 |
2008.12.09 |
申请人 |
FUJITA KEIJI;KANEKO HISASHI |
发明人 |
FUJITA KEIJI;KANEKO HISASHI |
分类号 |
H01L21/443;C23C16/44 |
主分类号 |
H01L21/443 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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