| 摘要 |
In a plasma treatment of a process gas including chlorine gas, a ceiling member of a silicon material is inhibited from being cut. According to an embodiment of the present invention, a plasma treatment apparatus used in a plasma treatment method includes a treatment container, a mounting member, and a ceiling member. The mounting member supports an object to be treated inside the treatment container. The ceiling member is a member made from the silicon material prepared in the upper portion of the mounting member. The plasma treatment method includes the steps of: bringing the object to be treated into the treatment container; and generating plasma of the treatment gas including the chlorine gas and oxygen gas. |
