| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device is provided. The semiconductor device includes a first porous interlayer insulating film having a low dielectric constant and including a first region and a second region, a second interlayer insulating film formed on the first interlayer insulating film in the first region, a plurality of first conductive patterns formed in the second interlayer insulating film such that the plurality of first conductive patterns are spaced apart from each other, at least one second conductive pattern formed in the first interlayer insulating film in the second region and air gaps disposed at lateral sides of the plurality of first conductive patterns. |
| 申请公布号 |
US2016211211(A1) |
申请公布日期 |
2016.07.21 |
| 申请号 |
US201514984085 |
申请日期 |
2015.12.30 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
YIM Tae-Jin;YOU Woo-Kyung;BAEK Jong-Min;AHN Sang-Hoon;OSZINDA Thomas;JUN Kee-Young |
| 分类号 |
H01L23/528;H01L23/532;H01L23/522 |
主分类号 |
H01L23/528 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first porous interlayer insulating film having a low dielectric constant and including a first region and a second region; a second interlayer insulating film formed on the first interlayer insulating film in the first region; a plurality of first conductive patterns formed in the second interlayer insulating film such that they are spaced apart from each other; at least one second conductive pattern formed in the first interlayer insulating film in the second region; and air gaps disposed at lateral sides of the plurality of first conductive patterns. |
| 地址 |
Suwon-si KR |
