SEMICONDUCTOR FABRICATION APPARATUS FOR METALLIC CVD, TUNGSTEN SILICIDE, AND METHOD FOR FORMING TUNGSTEN LAYER

摘要

PURPOSE: A semiconductor fabrication apparatus for metallic CVD, a tungsten silicide, and a method for forming a tungsten layer are provided to perform selectively a process for forming a tungsten layer and a tungsten silicide process within one apparatus by installing a gas mixing portion and gas flow meters at a shower head and gas supply lines, respectively. CONSTITUTION: A semiconductor substrate(100) is loaded on a substrate support plate. A plurality of process chambers(10) have a shower head(120) for injecting reaction gas, respectively. A gas supply device(20) is installed at the outside of the process chambers(10). The gas supply device(20) supplies plural reaction gases to the shower heads(120) of the process chambers(10). A gas mixing portion(130) is installed at an upper portion of the shower head(120) in order to mix reaction gases of the gas supply device(20) and supply the mixed gases to the shower head(120). A vacuum device is connected with the process chamber(10) in order to maintain a state of low pressure within the process chamber(10). The process chambers(10) are radially arranged within a large-sized chamber(5). A substrate carrier hole(15) is formed on one sidewall of the large-sized chamber(5).