DEVICE FOR DOPING IMPURITY, METHOD FOR DOPING IMPURITY, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a device for doping impurities, a method for doping impurities, and a method for manufacturing a semiconductor element, in which impurity elements can be doped into an inside of an object that is made of a solid material at a higher concentration than concentrations conventionally obtained.SOLUTION: An impurity doping apparatus 1a includes: a beam adjusting system 33 having a light source 34 that emits a light pulse, and irradiating an object 2 with the light pulse; and a light source control unit 32 for controlling the light source 34. An impurity source film 4 is formed on a surface of the object 2 that is made of a solid material, the impurity source film containing impurity elements and having a film thickness determined in consideration of an irradiation time per light pulse and the energy density of the light pulse, and the impurity source film 4 is irradiated with the light pulse with the irradiation time and the energy density so as to dope the impurity elements into the object.SELECTED DRAWING: Figure 1