| 摘要 |
The present invention relates to a method for forming an ultra-thin boron doping region in a semiconductor device. The method comprises: a step of depositing a diffusion filter layer containing a boron nitride layer, a boron oxynitride layer, a silicon nitride layer, or a silicon oxynitride layer on a substrate; a step of depositing a boron dopant layer containing a boron oxide, a boron oxynitride, or combination thereof on the diffusion filter layer under the condition that the diffusion filter layer and the boron dopant layer do not include the same material. The method further comprises a step of performing heat treatment on the substrate to form an ultra-thin boron dopant region in the substrate by controlling diffusion of boron from the boron dopant layer to the substrate through the diffusion filter layer. |
