| 摘要 |
A substrate processing apparatus comprises: a rotation table which is installed in a vacuum container to rotate, and loads a substrate; a first reaction gas supply unit which supplies first reaction gas to the surface of the rotation table; a second reaction gas supply unit which is installed to be separated in an around direction of the rotation table from the first reaction gas supply unit, and supplies second reaction gas reacting with the first reaction gas to the surface of the rotation table; and an activation gas supply unit including a discharge unit which is installed to be separated in the around direction of the rotation table from the first reaction gas supply unit and the second reaction gas supply unit, and supplies activated fluorine-containing gas to the surface of the rotation table, wherein the gas supply unit includes a pipe which is installed on the upstream side more than the discharge unit and supplies fluorine-containing gas to the discharge unit, and one or more hydrogen-containing gas supply units which are installed on the pipe and supply hydrogen-containing gas into the pipe. |
