| 摘要 |
PURPOSE:To obtain an electrode or an electrode wiring layer, having excellent adhesive property between an insulating film at high temperature, on which a semiconductor can be formed an ohmic contact by a method wherein, among Ti, Zn and Hf, at least a kind of compound of metal and nitrogen and an intrusion type transition metal containing a specific atomic percentage of Ta are used. CONSTITUTION:When Ta of 1-20% (atomic percentage) is contained, the membrane stress of TiN film is small, and pertaining to the adhesive property with an insulating film, even a film of 5,000Angstrom in thickness can be formed uniformly on a thermal oxide film SiO2, because the membrane stress is small. Even when ZrN and HfN are used as a compound, it has an excellent adhesive property with an insulating film when a Ta content of 1-20% is maintained, and an ohmic contact with a semiconductor can be formed. In the case of TiN, ZrN or HfN, a chemically and physically stable state can be obtained when the mol ratio of N of 40-60% is maintained. |
