| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching apparatus reducing the dispersion, due to position of etching rate, and to provide a method for manufacturing a semiconductor device which uses the dry etching apparatus and the semiconductor device manufactured by the method and a method for manufacturing an electrode of the dry etching apparatus used for the dry etching apparatus. SOLUTION: The method for manufacturing the semiconductor device, using the dry etching apparatus, comprises the steps of placing a polishing material on the surface of a rotary stage for polishing, disposed opposite the surface of a member which will service as a cathode electrode 4 on the surface of the stage for polishing via the polishing material, and polishing the surface of the member which will serve as the electrode by rotating the rotary stage, thereby manufacturing the cathode electrode having a difference of maximum dispersion of the steps, due to the ruggedness formed on the surface of the cathode electrode being 5 μm or less. The dry etching apparatus uses the cathode electrode as the cathode electrode 4 of the dry etching apparatus for executing etching step of the semiconductor device. |
