发明名称 HEATING APPARATUS FOR GAS PHASE GROWTH APPARATUS
摘要 PURPOSE:To obtain the titled heating apparatus wherein the uniform heating is enabled and the generation of a slip is prevented and the design of a heating mechanism is easy by constituting it of a specified treatment chamber, a heating element, a supporting part of a substrate and a heating source. CONSTITUTION:A substrate 4 is provided on a supporting material 10 so that a rear surface of the substrate 4 is held with an adsorption tool and the adsorption tool is inserted into a notched part 11 of the supporting material 10 formed with carbon, Si, SiC, quartz or ceramic. A treatment chamber 2 wherein at least one part is formed with quartz is closed and a purge gas of N2, H2 is successively flowed in the direction shown by an arrow A and the inside of the treatment chamber 2 is made to the H2 atmosphere and electricity is supplied to a heating source 5 to generate the infrared beam having the value of wavelength in about 1mum. The substrate 4 and a heating element 31 made of carbon are irradiated in the uniform intensity with the infrared beam by means of a reflector 7. The titled heating apparatus is applied to the various gas phase growth apparatus such as a vertical type and a cylindrical type besides a lateral type gas phase growth apparatus and to the various heating apparatus such as an annealing apparatus.
申请公布号 JPS61219794(A) 申请公布日期 1986.09.30
申请号 JP19850060358 申请日期 1985.03.25
申请人 TOSHIBA MACH CO LTD 发明人 GOTO TAISAN;KOMIYAMA KICHIZO;IGA HIROSHI;KOBAYASHI TAKEHIKO
分类号 C30B25/10 主分类号 C30B25/10
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