| 摘要 |
<p>PURPOSE:To improve ON/OFF characteristics of a TFT by providing a metallic film which covers a channel part and an intermediate-density impurity area. CONSTITUTION:The TFT in LDD(Lightly Doped Drain) structure has the metallic film 15 formed covering at least the channel part 12 and intermediate-density impurity area 23 of a semiconductor layer 30. Consequently, light never irradiates the channel part 12 by traveling around and the OFF current of the TFT at the time of light irradiation is prevented from increasing. Further, a voltage can be impressed to the metallic film 15, which further operates as a subgate for the TFT. Consequently, the OFF current of the TFT is decreased and the ON current is increased.</p> |
