发明名称 |
Integrated circuit having a void between adjacent conductive lines |
摘要 |
The invention proposes methods for producing integrated circuits wherein the dielectric constant between closely spaced and adjacent metal lines is approaching 1. One method of the invention uses low-melting-point dielectric to form a barrier form a void between conductive lines. Another method of the invention uses sidewall film to form a similar barrier.
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申请公布号 |
US5847439(A) |
申请公布日期 |
1998.12.08 |
申请号 |
US19960676537 |
申请日期 |
1996.07.09 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
REINBERG, ALAN R. |
分类号 |
H01L21/768;H01L23/482;H01L23/522;H01L23/528;(IPC1-7):H01L29/00;H01L23/58 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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