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发明名称
ION IMPLANTATION METHOD OF SEMICONDUCTOR MANUFACTURE PROCESS
摘要
申请公布号
KR0166218(B1)
申请公布日期
1999.02.01
申请号
KR19950056598
申请日期
1995.12.26
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
OK, KYUNG-HA;JOO, YONG-BYUNG;SONG, WOO-CHUL;CHO, SHIN-HYUN
分类号
H01L21/265;(IPC1-7):H01L21/265
主分类号
H01L21/265
代理机构
代理人
主权项
地址
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