| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate, wherein homogeneity of a porous silicon layer is improved, while manufacturing cost of a semiconductor element is lowered. SOLUTION: The manufacturing method is related to a semiconductor substrate for forming a large-area thin-film single-crystal silicon semiconductor element. Here, an adhesive layer comprises a polysilicon layer 12, and the surface of the polysilicon layer 12 is polished for bonding. To release a thin-film single-crystal silicon layer 13 from a single-crystal silicon substrate 14, a porous silicon layer 2 for releasing is formed on the single-crystal silicon substrate 14, and on the porous silicon layer 2, the thin-film single-crystal silicon layer 13 is epitaxially grown. A porous silicon layer 2 is formed by anode formation. In a transfer of the thin-film single-crystal silicon layer 13 to a support substrate 11, after the support substrate 11 and the single-crystal silicon substrate 14 have been pasted together at a low temperature, a shearing stress is applied due to the difference in thermal expansion coefficients between the support substrate 11 and the single-crystal silicon substrate 14 at a temperature rise or annealing at a high temperature to cause peeling off and transfer. |
