MANUFACTURE METHOD OF SEMICONDUCTOR APPARATUS

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the junction leakage of a conductive layer which is used as an active layer by performing a heat treatment process after coating a refractory metal layer. CONSTITUTION: The first transistor is formed in an active area of a semiconductor substrate(100) and the second transistor is formed adjacent to the first transistor. An active area of the first transistor is connected to a gate of the second transistor by a conductive material. An insulating layer(114) is formed on an upper surface of the semiconductor substrate(100). Then, the insulating layer(114) formed one of a source area (110) or a drain area(112) of the first transistor and on an upper portion of the gate(106) of the second transistor are removed. After coating silicon for forming silicide on the resulted structure, a photoresist film(120) is formed on the connection region between the first and second transistors. After removing the photoresist film(120), a metal layer is formed on the entire surface of the structure. A silicide layer is formed on the connection region by performing a heat-treating process.