| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser with improved emission characteristics by using a current constriction layer, that is made of a compound semiconductor containing at least Al, In, and P, at the same time cleans the surface of a semiconductor layer at a part etched for forming the current passage of the current constricting layer, and improving the crystallizablity of an upper second clad layer that grows on it, and its manufacturing method. SOLUTION: In a semiconductor laser, an n-type lower clad layer 2, an active layer 3, a p-type upper first clad layer 4, an n-type current constriction layer 5, and a p-type upper second clad layer 7 are laminated on an n-type GaAs substrate 1. Then, the current constriction layer 5 is made of a compound semiconductor containing at least In, Al and P, and at the same time selectively and thermally etches the current constriction layer 5 onto the current constriction layer 5 under As atmosphere. A vapor preventing layer 6 containing As is provided. Then, with the vapor preventing layer 6 as a mask, the current constricting layer 5 is thermally etched, and a stripe groove 15 is formed.
|
