| 摘要 |
PROBLEM TO BE SOLVED: To obtain an excellent single crystal thin film transistor by forming an acute-angled groove whose end has a predetermined or a smaller angle in a substrate, embedding semiconductors made of amorphous silicon, fine crystals or the like, and forming a large crystal semiconductor by annealing a semiconductor within the groove. SOLUTION: A groove 2 having an acute-angled end 21 in a region which generally become an active region on the surface of a substrate, the angle of the end 21 being 30 deg. or less. Then, an amorphous silicon (a-Si) film 31 is deposited on the entire surface of the substrate. The film 31 is removed from a region excluding the groove 2, so that a-Si remains only in the groove 2. Thereafter, a beam-shaped laser is injected in the direction of the groove from the end 21 of the groove. According to this constitution, cooling first starts at the end 21 of the groove, and crystallization initially occurs only at this single place. Thereafter, as the laser beam moves, silicon atoms newly precipitate in accordance with fine crystals produced at the end 21. Therefore, a plurality of single crystal silicon regions can be prepared.
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