发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To stably form a contact hole between fine bit lines, and to reduce the number of manufacturing processes. SOLUTION: A pad 106 is formed in an insulating film 105, and an insulating film 107 is accumulated on this and flattened, and a groove (contact hole) 109 is formed by using the insulating film 105 as an etching stopper. Then, conductive materials are embedded in the groove 109, and the conductive materials are removed so that recesses (dents) are formed in the insulating film 107, and a bit line 110 is formed. Then, an insulating film 111 is formed on the bit line 110, and the same kinds of insulating films 112 are formed on the side faces of the bit line 110. An insulating film 113 is accumulated, and a contact hole for forming a capacitor electrode is formed in the insulating film 113 with the insulating films 111, 112, and 105 as an etching stopper.
申请公布号 JP2000183308(A) 申请公布日期 2000.06.30
申请号 JP19980356514 申请日期 1998.12.15
申请人 OKI ELECTRIC IND CO LTD 发明人 MIYAGAWA YASUHARU
分类号 H01L21/302;H01L21/3065;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L21/306;H01L21/824 主分类号 H01L21/302
代理机构 代理人
主权项
地址