发明名称 |
DATA OUTPUT CIRCUIT OF SEMICONDUCTOR DEVICE HAVING LOW LEAKAGE CURRENT PROPERTY |
摘要 |
PURPOSE: A data output circuit of a semiconductor device is provided to reduce a leakage current while maintaining a sufficient driving capability, thereby stabilizing the operation of a device and improving a memory performance. CONSTITUTION: The device has an output buffering section(10) and an output driver circuit(21). The output driver circuit uses a single supply voltage. The data output circuit accommodates an internal supply voltage and an external supply voltage as a supply voltage. The output buffering section operates the respective internal devices by using the internal supply voltage. The output driver circuit operates the respective internal devices only by the external supply voltage. The data output circuit has an excellent driving capability and a low leakage current property while maintaining a sufficient output driving capability, thereby stabilizing the operation of a device.
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申请公布号 |
KR20010009205(A) |
申请公布日期 |
2001.02.05 |
申请号 |
KR19990027475 |
申请日期 |
1999.07.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN, GI SIK |
分类号 |
H03K19/0185;(IPC1-7):H03K19/018 |
主分类号 |
H03K19/0185 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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