发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, where defects occur on the surface of a wafer before and after the water is subjected to processing are compared with each other, in a manner in which defects are assorted by kind, and the defects of the same kind are compared with each other so as enable precise discrimination of one from the other, in a process of manufacturing an LSI wafer. SOLUTION: In a method of manufacturing a semiconductor device, defects are detected from the image of a processed substrate obtained by imaging the processed substrate before it is subjected to prescribed processing, the detected defects are classified, and data on the classified defects are stored, defects are detected from the image of the substrate obtained by imaging the processed substrate after it is processed in a prescribed process, the detected defects are classified, so that which occurred on the surface of the processed substrate before it is subjected to the prescribed processing are discriminated from those defects that occur on the surface of the processed substrate, after it is subjected to the prescribed processings using the data on the classified defects and the stored data as to the classified defects.
申请公布号 JP2001313324(A) 申请公布日期 2001.11.09
申请号 JP20010067955 申请日期 2001.03.12
申请人 HITACHI LTD 发明人 MAEDA SHUNJI;KUBOTA HITOSHI
分类号 G01B11/30;G01N21/956;G06T1/00;G06T7/00;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01B11/30
代理机构 代理人
主权项
地址