SEMICONDUCTOR POWER COMPONENT

摘要

At least one polysilicon (Si) resistor (5) is provided for the transmission of signals between a high voltage side (2) and a low voltage side (3) of a semiconductor power component (1) having a REduced SURface Field (RESURF) area (4) . Said polysilicon resistor is arranged above the RESURF area (4) and is electrically insulated therefrom, resulting in a high withstand strength with respect to blocking voltage.