| 发明名称 |
Method for manufacturing low power high efficiency non-volatile erasable programmable memory cell structure |
| 摘要 |
A low power high efficiency non-volatile erasable programmable memory cell structure has a characteristic, distributed, floating gate structure comprising an assembly of independent crystalline silicon crystals. Each crystalline silicon crystal has a diameter of roughly between 10 Å and 100 Å and is separated from the other crystals by a distance greater than 50 Å.
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| 申请公布号 |
US6331463(B1) |
申请公布日期 |
2001.12.18 |
| 申请号 |
US19990233375 |
申请日期 |
1999.01.18 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN SHEN-LI |
| 分类号 |
H01L21/28;H01L21/336;H01L29/423;H01L29/788;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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