| 发明名称 |
CRYSTAL STRUCTURE CONTROL OF POLYCRYSTALLINE SILICON IN A SINGLE WAFER CHAMBER |
| 摘要 |
A method and apparatus for forming a polycrystalline silicon film. According to the present invention a process gas mix comprising a silicon source gas and a dilution gas mix is fed into a chamber wherein the dilution gas mix comprises H2 and an inert gas. A polycrystalline silicon film is then formed from the process gas mix. |
| 申请公布号 |
WO0201615(A2) |
申请公布日期 |
2002.01.03 |
| 申请号 |
WO2001US20102 |
申请日期 |
2001.06.22 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG, SHULIN;CHEN, STEVEN, A.;LEE, LUO;SANCHEZ, ERROL |
| 分类号 |
H01L21/28;C23C16/24;H01L21/205;H01L21/285;H01L29/78 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
