发明名称 Method for improving chemical vapor deposition of titanium
摘要 A method of conditioning a deposition chamber. The method comprises performing a pre-coat step and a plasma treatment step. The pre-coat step deposits a material layer upon interior surfaces of the chamber and its interior components, while the plasma treatment step further reduces the amount of undesirable residual gases.
申请公布号 US2002094387(A1) 申请公布日期 2002.07.18
申请号 US20000513283 申请日期 2000.02.24
申请人 BHAN MOHAN KRISHNAN 发明人 BHAN MOHAN KRISHNAN
分类号 C23C16/44;(IPC1-7):C23C16/00 主分类号 C23C16/44
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