LOW VOLUME RESISTIVITY MATERIAL, ALUMINUM NITRIDE SINTERED COMPACT AND MEMBER FOR MANUFACTURING SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a material having low volume resistivity at a normal temperature using aluminum nitride sintered compact as a base. SOLUTION: The low volume resistivity material is composed of the aluminum nitride sintered compact consisting essentially of aluminum nitride and containing >=0.04 mol% samarium expressed in terms of oxide and contains a aluminum nitride phase and a samarium - aluminum oxide phase. The samarium - aluminum oxide phase produces a low resistivity layer along the grain boundary of aluminum nitride particles.