SEMICONDUCTOR DEVICE HAVING SUPER LATTICE STRUCTURE SEMICONDUCTOR LAYER AND ITS FABRICATION METHOD, ESPECIALLY HAVING REDUCED INPUT POWER AND IMPROVED ENDURANCE

摘要

PURPOSE: A semiconductor device having a super lattice structure semiconductor layer and its fabrication method are provided to reduce series resistance without reducing optical confinement. CONSTITUTION: The semiconductor device includes a super lattice structure semiconductor layer stacked with the first material layer(581) and the second material layer(582) in turn. A number of holes(581a,582a) are formed in each of the first and the second material layer, and each hole of the corresponding material layer is filled with a material of other adjacent material layer. The super lattice structure is a p-type semiconductor layer, and has a structure of GaN/AlGaN.