| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a driver transistor is arranged under electrode pads so as to prevent shortage between the source and the drain of the driver transistor and relax current crowding in a metal wiring layer. <P>SOLUTION: In the semiconductor device, an electrode pad for source potential 23s and an electrode pad for drain potential 23d are provided on a driver transistor forming region 5, and as for one-layer-under metal wiring layers 17s-3 and 17d-3, only the one-layer-under metal wiring layer for source potential 17s-3 is provided directly under the electrode pad 23s, and only the one-layer-under metal wiring layer for drain potential 17d-3 is provided directly under the electrode pad 23d. A metal wiring layer for source potential 17s-2 and a metal wiring layer for drain potential 17d-2 are provided directly under the electrode pads 23s and 23d, respectively. The potential of the metal wiring layer for source potential 17s-2 is drawn to a plurality of one-layer-under metal wiring layers for source potential 17s-3, and the potential of the metal wiring layer for drain potential 17d-2 is drawn to a plurality of one-layer-under metal wiring layers for drain potential 17d-3. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
