METHOD OF FORMING A SILICON PATTERN HAVING A SINGLE CRYSTAL AND METHOD OF FORMING A NON-VOLATILE MEMORY DEVICE USING THE SAME

摘要

A method for forming a single crystal silicon pattern is provided to form a finer and better pattern as compared with a conventional photolithography process by forming a single crystal silicon pattern by an SEG(selective epitaxial growth) method. On a substrate(100) including a single crystal silicon, a silicon germanium layer pattern and an epitaxial growth stop layer pattern are sequentially formed which confines a first opening partially exposing the substrate. An SEG process is performed on the silicon germanium layer pattern and the exposed substrate to form a single crystal silicon layer along the profile of the opening. The silicon germanium layer pattern and the epitaxial growth stop layer pattern are removed to form single crystal silicon patterns(114). The thickness of the single crystal silicon layer can be the same as the width of the silicon germanium layer pattern.