| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of cracks in a semiconductor element by reducing tensile stress applied to the element in the manufacturing process of the element. SOLUTION: In a semiconductor device which is constituted by soldering the semiconductor element 12 onto a heat sink, a metallic electrode 19 is formed in at least the outer peripheral section of the upper surface of the element 12. When the device is constituted in this way, the electrode 19 shrinks more than the semiconductor element 12 does and compressive stress is left in the element 12, because the electrode 19 has a larger coefficient of thermal expansion than the element 12 has. When the tensile stress acts on the element 12 under this condition, the endurable tensile stress of the element 12 is increased by the residual compressive stress, because the residual compressive stress offsets the tensile stress. |
