PIXEL OF CMOS IMAGE SENSOR AND METHOD FOR FORMING THE PIXEL STRUCTURE OF CMOS IMAGE SENSOR

摘要

A pixel of CMOS image sensor and a method for manufacturing the same are provided to lower height, to improve output signal efficiency and color sensitivity by forming a color filter within a photodiode. A pixel of CMOS image sensor includes a semiconductor substrate(401), a photodiode having a trench structure formed on an upper surface of the semiconductor substrate, and a color filter(411) formed in the inside of the trench. The color filter is formed by gap-filling a material for receiving selectively a particular wavelength band into the trench structure. The color filter is used for absorbing selectively one of R, G, and B colors. The pixel further includes an isolation layer(511) which is formed at one side of the photodiode and is formed perpendicularly to the semiconductor substrate.