| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance component of the emitter electrode of an IGBT and to suppress rise in costs due to a gold thin wire. SOLUTION: An opening in an emitter pad (3) on a chip (1) is formed in such a way that 50% or more of the actual operating area of the chip (1) becomes an open area. The semiconductor device of high versatility is provided in such a way that the emitter pad (3) is made symmetric, or that the emitter pad is expanded up to a part near the long side of the chip (1), or that the three of them are combined. |
