| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor light emitting elements wherein the migration generated when they are manufactured can be prevented. <P>SOLUTION: The method is the one wherein a plurality of semiconductor light emitting elements are manufactured at the same time. The method has a step of so laminating on a substrate first conductivity type and second conductivity type semiconductor layers successively as to form a semiconductor laminate, a step of so removing a portion of the semiconductor laminate as to form a step portion wherein the first conductivity type semiconductor layer is exposed to the external, a step of forming a first electrode in the first conductivity type semiconductor layer exposed to the step portion, a step of forming a second electrode on the top surface of the second conductivity type semiconductor layer, and a step of performing the division of the resultant product into individual semiconductor light emitting elements. Hereupon, at least one electrode of the first and second electrodes is a metal electrode. Further, the method includes a process for forming such a shorting portion as to short with a conductive member the first conductivity type and second conductivity type semiconductor layers prior to the time or at the same time when forming at least either one metal electrode of the first and second electrodes. By the foregoing division process, the second conductivity type semiconductor layer present near the step portion is separated from the residual second conductivity type semiconductor layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
