发明名称 |
Radiation hardened multi-bit sonos non-volatile memory |
摘要 |
In one aspect, a radiation hardened transistor includes a buried source, buried drain and a poly-silicon gate separated from the buried source and the buried drain by a buried oxide. A recessed P+ implant or a blanket P+ implant is disposed in a substrate. A portion of the recessed P+ implant or a portion of the blanket P+ implant is disposed beneath outer edges of the poly-silicon gate, in a channel separating the buried source and the buried drain.
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申请公布号 |
US2009059675(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
US20070892874 |
申请日期 |
2007.08.28 |
申请人 |
SMITH JOSEPH T;ADAMS DENNIS A;WRAZIEN STEPHEN J;FITZPATRICK MICHAEL D;SMITH PHILIP |
发明人 |
SMITH JOSEPH T.;ADAMS DENNIS A.;WRAZIEN STEPHEN J.;FITZPATRICK MICHAEL D.;SMITH PHILIP |
分类号 |
G11C11/34;H01L21/336;H01L29/94 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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