Phase-change memory units, methods of forming the phase-change memory units, phase-change memory devices having the phase-change memory units and methods of manufacturung the phase-change memory devices

摘要

A phase-change memory unit includes a lower electrode on a substrate, a phase-change material layer pattern including germanium-antimony-tellurium (GST) and carbon on the lower electrode, a transition metal layer pattern on the phase-change material layer pattern, and an upper electrode on the first transition metal layer pattern. The phase-change memory unit may have good electrical characteristics.