| 摘要 |
A module with embedded semiconductor IC of the present invention includes a first resin layer, a second resin layer, post electrodes passing through the first and second resin layers, and a semiconductor IC mounted as embedded between the first resin layer and the second resin layer. Stud bumps are formed on land electrodes of the semiconductor IC and positioned with respect to the post electrodes. Owing to this positioning of the stud bumps formed on the semiconductor IC with respect to the post electrodes, the planar position of the stud bumps is substantially fixed. As a result, it is possible to use a semiconductor IC having a very narrow electrode pitch of 100 mum or smaller, particularly of around 60 mum.
|
