发明名称 |
Method of fabricating semiconductor device |
摘要 |
The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deteriorating, on-current from decreasing, or off-current from increasing due to a grain boundary and a semiconductor device fabricated by the fabrication method. Striped (banded) or rectangular concave and convex portions are formed. Then, a semiconductor film formed on an insulating film is irradiated with a laser beam diagonally to the longitudinal direction of concave and convex portions on the insulating film.
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申请公布号 |
US7547593(B2) |
申请公布日期 |
2009.06.16 |
申请号 |
US20070704214 |
申请日期 |
2007.02.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MIYAIRI HIDEKAZU;ISOBE ATSUO;MORIWAKA TOMOAKI;SHIMOMURA AKIHISA |
分类号 |
H01L21/84;C30B1/00;H01L21/20;H01L21/336;H01L21/768;H01L21/77;H01L29/04;H01L29/786 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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